东北大学学报（自然科学版）

东北大学学报:自然科学版 ›› 2014, Vol. 35 ›› Issue (9): 1284-1288.DOI: 10.12068/j.issn.1005-3026.2014.09.016

• 材料与冶金 • 上一篇    下一篇

纯钛TA1和钛合金TC4表面固体渗硼

李凤华，董梦格，王丽娜，樊占国   

  1. (东北大学 材料与冶金学院， 辽宁 沈阳110819)
  • 收稿日期:2013-10-30 修回日期:2013-10-30 出版日期:2014-09-15 发布日期:2014-04-11
  • 通讯作者: 李凤华
  • 作者简介:李凤华(1977-)，女，湖北荆门人，东北大学副教授；樊占国(1944-)，男，黑龙江五常人，东北大学教授，博士生导师.
  • 基金资助:
    中央高校基本科研业务费专项资金资助项目(N110402004).

Solid Boronizing on the Surface of Pure Titanium TA1 and Titanium Alloy TC4

LI Fenghua， DONG Mengge， WANG Lina， FAN Zhanguo   

  1. School of Materials & Metallurgy， Northeastern University， Shenyang 110819， China.
  • Received:2013-10-30 Revised:2013-10-30 Online:2014-09-15 Published:2014-04-11
  • Contact: LI Fenghua
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摘要： 采用固体粉末法分别对基体组织为α-Ti的TA1和基体组织为(α+β)-Ti的TC4钛合金表面进行了渗硼，在偏光显微镜和扫描电镜(SEM)下观察了渗层的形貌，用X射线衍射(XRD)分析了渗层的物相组成.实验结果表明，渗硼温度在850~1000℃范围内，TA1表面渗层为平行于基体表面的多层结构，为Ti3O相和TiB相;当渗硼温度高于920℃时TiB为主要组成并出现了TiB2相，且硼钛化合物的含量随温度升高而增加.当渗硼温度低于1000℃时，TC4表面渗层为Ti3O相和TiB相，在渗硼温度高于1000℃时，渗层为TiB2+TiB晶须结构.渗硼温度高于1000℃是TA1和TC4表面形成硼钛化合物的充分条件.

关键词: 纯钛TA1, 钛合金TC4, 硼钛化合物, 固体渗硼, 扩散机理

Abstract: The solid powder boronizing， on the surface of titanium alloys with matrix structure αTi of TA1 and(α+β)Ti of TC4， was investigated. The morphology of boride layer was observed by polarizing microscope and scanning electron microscope(SEM). The phase composition of boride layer was analyzed by Xray diffraction(XRD). The results show that when boronizing temperature is in the range of 850~1000℃， diffusion layers on TA1 in a multilayer structure are paralleled to the surface of the substrate， which composes of Ti3O and TiB phases. When the temperature is higher than 920℃， TiB becomes the major component in the diffusion layer with TiB2， and the content of titanium borides increases with temperature. When the temperature is lower than 1000℃， Ti3O and TiB are the major components of the layer on TC4. When it is higher than 1000℃， the layer is TiB2 and TiB whisker. Boronizing temperature above 1000℃ is the sufficient condition for the formation of titanium borides.

Key words: pure titanium TA1, titanium alloy TC4, titanium boride, solid boronizing, diffusion kinetics

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