东北大学学报（自然科学版）

东北大学学报:自然科学版 ›› 2017, Vol. 38 ›› Issue (7): 983-988.DOI: 10.12068/j.issn.1005-3026.2017.07.015

• 机械工程 • 上一篇    下一篇

单晶硅微尺度侧磨表面质量影响因素试验研究

周云光1， 巩亚东2， 高奇2， 朱宗孝2   

  1. (1.东北大学秦皇岛分校 控制工程学院， 河北 秦皇岛066004； 2.东北大学 机械工程与自动化学院， 辽宁 沈阳110819)
  • 收稿日期:2016-02-02 修回日期:2016-02-02 出版日期:2017-07-15 发布日期:2017-07-07
  • 通讯作者: 周云光
  • 作者简介:周云光(1986-)，男，河北秦皇岛人，东北大学博士研究生； 巩亚东(1958-)，男，辽宁本溪人，东北大学教授，博士生导师.
  • 基金资助:
    国家自然科学基金资助项目(51375082).

Experimental Study on Influencing Factor of Surface Quality in Micro Side Grinding of Single Crystal Silicon

ZHOU Yun-guang1， GONG Ya-dong2， GAO Qi2， ZHU Zong-xiao2   

  1. 1. School of Control Engineering， Northeastern University at Qinhuangdao， Qinhuangdao 066004， China; 2. School of Mechanical Engineering & Automation， Northeastern University， Shenyang 110819， China.
  • Received:2016-02-02 Revised:2016-02-02 Online:2017-07-15 Published:2017-07-07
  • Contact: ZHOU Yun-guang
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摘要： 为了获得具有较好表面质量的典型硬脆材料单晶硅微结构，采用微尺度磨削技术，利用直径为0.9mm的微磨棒沿单晶硅(100)晶面进行磨削.首先通过三因素五水平的正交试验分析出影响单晶硅微尺度磨削表面粗糙度的主次因素;其次优化出获得较小表面粗糙度的单晶硅微尺度磨削工艺;最后通过单因素试验研究单晶硅微磨削表面粗糙度(R○a)随工艺参数的变化规律.结果表明:在沿单晶硅(100)晶面的微磨削过程(20000r/min≤v○s≤60000r/min， 20μm/s≤v○w≤170μm/s和3μm≤a○p≤15μm)中，主轴转速对R○a影响最大;当主轴转速(v○s)为50000r/min、进给速度(v○w)为20μm/s、磨削深度(a○p)为3μm时，R○a最小;R○a随v○s的增大基本呈减小趋势，但v○s过大时机床主轴出现振动，R○a出现增大趋势.R○a随v○w和a○p的增大而增大.

关键词: 微加工, 微尺度磨削, 单晶硅, 磨削表面质量, 表面粗糙度

Abstract: To obtain the microstructure of single crystal silicon with a good surface quality， the single crystal silicon was grinded along the (100) crystal plane with microscale grinding technology by using microgrinding tool with diameter of 0.9 mm. Firstly， the main influence factors on microgrinding surface roughness of single crystal silicon were analyzed by the orthogonal experiment with three factors and five levels. Then， the microgrinding process was optimized to obtain minimum surface roughness. Lastly， the effect of process parameters on the surface roughness (R○a) of microgrinding single crystal silicon was analyzed through single-factor experiment. The results show that: in the microgrinding process (20000r/min≤v○s≤60000r/min， 20μm/s≤v○w≤170μm/s and 3μm≤a○p≤15μm) along (100) crystal plane of single crystal silicon， the influence of spindle speed on R○a was maximum; when the spindle speed (v○s) was 50000r/min， feeding rate (v○w) was 20μm/s， grinding depth (a○p) was 3μm， R○a was minimum; R○a reduces basically with the increase of v○s， but if v○s was too large， the spindle appeared vibration， R○a showed the tendency of increase. R○a raises with the increase of v○w and a○p.

Key words: micro machining, micro grinding, single crystal silicon, grinding surface quality, surface roughness

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