东北大学学报(自然科学版) ›› 2005, Vol. 26 ›› Issue (2): 198-200.DOI: -

• 论著 • 上一篇    下一篇

自旋1/2铁电膜表面和平均磁化强度的理论计算

田丽珍;杜安   

  1. 东北大学理学院;东北大学理学院 辽宁沈阳 110004
  • 收稿日期:2013-06-24 修回日期:2013-06-24 出版日期:2005-02-15 发布日期:2013-06-24
  • 通讯作者: Du, A.
  • 作者简介:-
  • 基金资助:
    国家重点基础研究发展规划项目(TG2000067104)

Theoretical calculation of surface and average magnetization of spin-1/2 ferroelectric thin films

Tian, Li-Zhen (1); Du, An (1)   

  1. (1) Sch. of Sci., Northeastern Univ., Shenyang 110004, China
  • Received:2013-06-24 Revised:2013-06-24 Online:2005-02-15 Published:2013-06-24
  • Contact: Du, A.
  • About author:-
  • Supported by:
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摘要: 利用在层内采用Bethe Peierls近似、层间采用平均场近似的方法,计算了6个原子层和20个原子层构成的自旋1/2铁电膜的磁化强度·发现在不同的表面耦合强度下,薄膜的表面磁化和平均磁化有明显的不同,表面耦合强度小,表面磁化弱于整体磁化,否则表面磁化强于整体磁化,但薄膜的表面和整体具有相同的转变温度·对于较厚的薄膜,系统的整体磁化受表面耦合强度影响小,但在转变温度附近,强的表面耦合强度会带动薄膜的整体磁化·横向场抑制薄膜的自发磁化·

关键词: 铁电膜, 自旋, BethePeierls近似, 平均场近似, 磁化强度, 转变温度

Abstract: The magnetization of spin-1/2 ferroelectric thin films consisting of 6 and 20 atomic layers is calculated by using Bethe-Peierls approximation within a layer and mean field approximation between layers. It is found that the surface magnetization is different obviously from the average magnetization of the films if the surface bonding strength is not the same. The surface magnetization is weaker than the entire one if the surface bonding strength is low, and vice versa. However, both the surface and entire magnetization have the same transition temperature. So, for a thicker film, the entire magnetization of film is affected slightly by the surface bonding strength, while the strong surface bonding strength will bring a thin film to be magnetized entirely in the vicinity of transition temperature. The transverse field will restrain the spontaneous magnetization of the film.

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