东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2008, Vol. 29 ›› Issue (6): 857-860+864.DOI: -

• 论著 • 上一篇    下一篇

碳热还原氮化高钛渣合成TiN/β′-Sialon导电陶瓷粉体

姜涛;李江;薛向欣;巫俊斌;   

  1. 东北大学材料与冶金学院;东北大学材料与冶金学院;东北大学材料与冶金学院;东北大学材料与冶金学院 辽宁沈阳110004;辽宁沈阳110004;辽宁沈阳110004;辽宁沈阳110004
  • 收稿日期:2013-06-22 修回日期:2013-06-22 出版日期:2008-06-15 发布日期:2013-06-22
  • 通讯作者: Jiang, T.
  • 作者简介:-
  • 基金资助:
    国家自然科学基金资助项目(50574029);;

Synthesis of electroconductive ceramic powder of TiN/β′-sialon by carbothermal reduction-nitridation of high titania slag

Jiang, Tao (1); Li, Jiang (1); Xue, Xiang-Xin (1); Wu, Jun-Bin (1)   

  1. (1) School of Materials and Metallurgy, Northeastern University, Shenyang 110004, China
  • Received:2013-06-22 Revised:2013-06-22 Online:2008-06-15 Published:2013-06-22
  • Contact: Jiang, T.
  • About author:-
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摘要： 以高钛渣、高铝矾土熟料、硅灰和炭黑为原料,采用碳热还原氮化法合成TiN/β′-Sialon导电陶瓷粉体.利用XRD,SEM和EDS检测手段研究了合成温度、恒温时间对反应过程的影响,并探讨了合成机理.结果表明:合成温度、恒温时间对反应过程影响显著.1 400℃恒温2 h时,β′-Sialon含量达最大,是最佳的工艺参数.此时β-′Sialon晶粒多呈长柱状,TiN为细小粒状.合成过程中SiO的挥发导致试样较大的质量损失,且随合成温度升高和恒温时间延长而增大.

关键词: 高钛渣, 碳热还原氮化, TiN/β′-Sialon, 导电陶瓷, 粉体

Abstract: TiN/β′-Sialon electroconductive ceramic powder was synthesized by CRN (carbothermal reduction-nitridation) with high-titania slag, bauxite chalmette, silicon fume and carbon black as starting materials. The influences of various reaction parameters such as temperature and holding time at top temperature on the reaction process were studied by XRD, SEM and EDS, as well as the synthesis mechanism. The results showed that the synthetic reaction process of TiN/β′-Sialon powder is greatly affected by the holding time and temperature. The content of β′-Sialon in the sample becomes maximum at 1400°C for 2 hr and these process parameters are regarded as the best during synthesis. At that moment most of β′-Sialon grains in the sample exhibits long and columnar in morphology with fine TiN grains. The volatilization of SiO in the synthesis process results in great mass loss which will further increase with rising temperature and prolonged holding time for a constant temperature.

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