东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2009, Vol. 30 ›› Issue (2): 233-237.DOI: -

• 论著 • 上一篇    下一篇

三源共蒸法制备CIS薄膜及其性能研究

单玉桥;党鹏;孙绍广;单连中;   

  1. 东北大学材料各向异性与织构教育部重点实验室;
  • 收稿日期:2013-06-22 修回日期:2013-06-22 出版日期:2009-02-15 发布日期:2013-06-22
  • 通讯作者: Shan, Y.-Q.
  • 作者简介:-
  • 基金资助:
    国家自然科学基金资助项目(50571023)

Preparation of CuInSe2 thin films by tri-source vacuum co-evaporation and their properties

Shan, Yu-Qiao (1); Dang, Peng (1); Sun, Shao-Guang (1); Shan, Lian-Zhong (1)   

  1. (1) Key Laboratory for Anisotropy and Texture of Materials, Northeastern University, Shenyang 110004, China
  • Received:2013-06-22 Revised:2013-06-22 Online:2009-02-15 Published:2013-06-22
  • Contact: Shan, Y.-Q.
  • About author:-
  • Supported by:
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摘要： 用三源共蒸法以高纯的Cu,In,Se粉为原材料制备了CuInSe2薄膜,研究了基片温度、退火处理对薄膜形貌、结构、光学及电学性能的影响.用扫描电镜、X射线衍射仪、紫外-可见分光光度计、霍尔效应仪对薄膜的形貌、结构、光学及电学性能进行检测.研究结果表明:不同基片温度下的薄膜对可见光都具有较高的吸收指数;薄膜在(112)晶面有高度的择优取向;基片温度为200℃时薄膜的Eg为0.99 eV;基片温度为200℃和300℃时薄膜都获得了单一黄铜矿结构的CuInSe2,退火处理后电阻为1.53Ω/cm2和1.55Ω/cm2.

关键词: CuInSe2, 太阳电池, 薄膜, 三源共蒸

Abstract: The CuInSe2 (CIS) thin films were prepared by tri-source vacuum co-evaporation with the pure Cu, In and Se powder as the evaporation sources. The effects of substrate temperature and annealing process on the surface morphology, structure and optical electrical properties of the films were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-visible spectroscopy and Hall probe. The results showed that the absorption indices of the thin films deposited on the substrates at different temperatures are all high in visible light band and all the films have a (112) preferred orientation. The energy gap is 0.99 eV when the substrate is at 200°C. The CuInSe2 films are of single chalcopyrite structure when the substrate temperature is either 200°C or 300°C, and their resistance is 1.53 Ω/cm2 or 1.55 Ω/cm2 after annealing, respectively.

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