NiO-TiO2纳米复合薄膜的阻变特性

doi:10.12068/j.issn.1005-3026.2016.05.017

东北大学学报:自然科学版 ›› 2016, Vol. 37 ›› Issue (5): 688-691.DOI: 10.12068/j.issn.1005-3026.2016.05.017

NiO-TiO₂纳米复合薄膜的阻变特性

李建昌，李润霞，郑辰平

(东北大学机械工程与自动化学院，辽宁沈阳110819)

收稿日期:2015-03-18 修回日期:2015-03-18 出版日期:2016-05-15 发布日期:2016-05-13
通讯作者: 李建昌
作者简介:李建昌(1970-)，男，河北河间人，东北大学教授.
基金资助:
中央高校基本科研业务费专项资金资助项目(N110403001).

Resistance Switching of NiO-TiO₂Nano-Composite Thin Films

LI Jian-chang， LI Run-xia， ZHENG Chen-ping

School of Mechanical Engineering & Automation， Northeastern University， Shenyang 110819， China.

Received:2015-03-18 Revised:2015-03-18 Online:2016-05-15 Published:2016-05-13
Contact: LI Jian-chang
About author:-
Supported by:
-

摘要/Abstract

摘要： 利用溶胶凝胶法制备了不同n(Ni)/n(Ti)比的NiO-TiO₂复合薄膜，电学测试表明薄膜具有可重复双极阻变特性，且开关比与NiO薄膜相比有显著提升.400℃退火n(Ni)/n(Ti)为7∶1的样品阻变阈值电压低、开关比高且稳定性好，原因是NiO-TiO₂薄膜可形成P-N结纳米结构.焦耳热分析表明薄膜荷电输运属于热激发，高阻态符合由氧空位缺陷俘获电荷所致空间电荷限制导电机制，低阻态为欧姆特性，阻变机理为电荷俘获及再释放.

关键词: 溶胶凝胶法, 金属氧化物复合薄膜, 阻变特性, 氧空位

Abstract: The NiO-TiO₂ (NTO) nanocomposite thin films with different n(Ni)/n(Ti) ratios were fabricated through sol-gel method. The current-voltage measurements indicated that the NTO films exhibit bipolar resistance switching behavior with low threshold voltage， high on/off ratio and long retention time. The low resistance state was governed by the Ohmic mechanism， while the high resistance state can be described with the oxygen-vacancy-related space charge limited conduction. The switching mechanism is related to the charge trapping/detrapping process.

Key words: sol-gel method, metal-oxide composite thin film, resistance switching, oxygen vacancy

中图分类号:

TQ630.1

李建昌，李润霞，郑辰平. NiO-TiO₂纳米复合薄膜的阻变特性[J]. 东北大学学报:自然科学版, 2016, 37(5): 688-691.

LI Jian-chang， LI Run-xia， ZHENG Chen-ping. Resistance Switching of NiO-TiO₂Nano-Composite Thin Films[J]. Journal of Northeastern University Natural Science, 2016, 37(5): 688-691.

参考文献

[1]Wong H S P，Lee H Y，Yu S，et al.Metal-oxide RRAM［J］.Proceedings of the IEEE，2012，100(6):1951- 1970.
[2]Akinaga H，Shima H.Resistive random access memory (ReRAM) based on metal oxides［J］.Proceedings of the IEEE，2011，98(12):2237-2251.
[3]Singh S K，Shanthy S，Ishiwara H.Reduced leakage current in BiFeO₃-BiCrO₃ nanocomposite films formed by chemical solution deposition［J］.Journal of Applied Physics，2010，108(5):054102-5.
[4]Sarkar D K，Cloutier F，Khakania M A.Electrical switching in sol-gel derived Ag-SiO₂ nanocomposite thin films［J］.Journal of Applied Physics，2005，97(8):084302 .
[5]Senthilkumar V，Kathalingam A，Valanarasu S，et al.Bipolar resistive switching of solution processed TiO₂-graphene oxide nanocomposite for nonvolatile memory applications［J］.Physics Letters A，2013，377(31):2432-2435.
[6]Chen C J，Liao C H，Hsu K C，et al.P-N junction mechanism on improved NiO/TiO₂ photocatalyst［J］.Catalysis Communications，2011，12(14):1307-1310.
[7]李建昌，王玉磊，徐彬，等.Eu-Ru共掺NiO-SnO₂复合纳米粒子薄膜的阻变特性［J］.东北大学学报(自然科学版)，2013，34(10):1469-1472.(Li Jian-chang，Wang Yu-lei，Xu Bin，et al.Resistive switching of Eu-Ru co-doped NiO-SnO₂ composite nanoparticle thin films［J］.Journal of Northeastern University( Natural Science)，2013，34(10):1469-1472.)
[8]Yan X B，Yin J，Liu Z G，et al.Studies on the reset power needed for the unipolar resistive switching in amorphous SrTiO₃-δ films induced by electrical pulse［J］.Physics Letters A，2011，375(41):3599-3603.
[9]Yu C Y，Feng P，Fei Z.Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories:active region and influence of Joule heating［J］.New Journal of Physics，2010，12(6):769-778.
[10]Li Y，Liu Z，Tan T.Resistive switching behavior of hafnium oxide thin film grown by magnetron sputtering［J］.Rare Metal Materials & Engineering，2014，43(1):24-27.
[11]史自鸿，孙献文，丁玲红，等.Au/STO/Pt三明治结构阻变存储器性质研究［J］.电子元件与材料，2012(8):25-28.(Shi Zi-hong，Sun Xian-wen，Ding Ling-hong，et al.Study on the properties of Au/STO/Pt resistance random access memory with a sandwich structure［J］.Electronic Components and Materials，2012(8):25-28.)

NiO-TiO₂纳米复合薄膜的阻变特性

Resistance Switching of NiO-TiO₂Nano-Composite Thin Films

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 7

编辑推荐

Metrics

本文评价

[1]	郝熙娟，胡剑南，赵赫，李建中. 自组装CaCO₃模板法合成锂离子电池负极材料SnO₂@voids@C-SnO及改性研究[J]. 东北大学学报（自然科学版）, 2023, 44(3): 363-369.
[2]	李凤华，周爽，岳宏瑞，史晓国. YFeO₃粉体的制备与可见光光催化性能[J]. 东北大学学报:自然科学版, 2018, 39(9): 1253-1257.
[3]	李建昌，王玉磊，徐彬，侯雪艳. Eu-Ru共掺NiO-SnO2复合纳米粒子薄膜的阻变特性[J]. 东北大学学报(自然科学版), 2013, 34(10): 1469-1472.
[4]	李建昌;李永宽;姜永辉;巴德纯;. 退火温度对Li掺杂ZnO薄膜光电特性的影响[J]. 东北大学学报(自然科学版), 2012, 33(8): 1174-1178.
[5]	徐茶清;田彦文;翟玉春;王自霞. 尖晶石型LiMn_2O_4的溶胶凝胶法制备[J]. 东北大学学报(自然科学版), 2004, 25(10): 998-1001.
[6]	李凤华;王珏;刘常升;樊占国. 柠檬酸溶胶凝胶法合成YBa_2Cu_3O_(7-δ)[J]. 东北大学学报(自然科学版), 2003, 24(11): 1061-1063.
[7]	刘奎仁;韩庆;陈建设;魏绪钧. 光降解用WO_3-TiO_2复合光催化剂[J]. 东北大学学报(自然科学版), 2003, 24(11): 1064-1067.