东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2012, Vol. 33 ›› Issue (1): 77-80+85.DOI: -

• 论著 • 上一篇    下一篇

Co-W磁性薄膜应变对其有效磁晶各向异性能的影响

秦高梧;肖娜;李松;任玉平;   

  1. 东北大学材料各向异性与织构教育部重点实验室;东北大学材料电磁过程研究教育部重点实验室;
  • 收稿日期:2013-06-19 修回日期:2013-06-19 发布日期:2013-01-17
  • 通讯作者: -
  • 作者简介:-
  • 基金资助:
    教育部新世纪优秀人才支持计划项目(NCET-09-0272);;

Effect of strain of Co-W thin film on effective magnetic anisotropy energy

Qin, Gao-Wu (1); Xiao, Na (2); Li, Song (1); Ren, Yu-Ping (1)   

  1. (1) Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China; (2) Key Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
  • Received:2013-06-19 Revised:2013-06-19 Published:2013-01-17
  • Contact: Qin, G.-W.
  • About author:-
  • Supported by:
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摘要： 利用磁控溅射在250℃的MgO(220)单晶基片上先后沉积Cr(100 nm)下底层和不同厚度(9~80 nm)的Co-11%W(原子分数)磁性层,二者取向附生生长关系为Cr(112)[111]∥Co-W(1010)[1210]和Cr(112)[110]∥Co-W(1010)[0001].随着膜厚的增加,Co-W在薄膜面内的压应变(ε<0)由-0.388 4%减小到-0.271 1%,Co-W在薄膜法线方向拉应变(ε>0)从0.781 3%减小到0.544 5%,相应地其有效磁晶各向异性能一级常数Ke1ff由3.82×106减小到2.58×106erg/cc.该结果表明通过设计磁性层和下底层之...

关键词: 应变, 磁记录介质, 磁晶各向异性能, 取向附生, Co-W

Abstract: Co-11at%W films with different thicknesses (9~80 nm) were deposited on MgO (220) single crystal substrate with Cr underlayer (100 nm) by magnetron sputtering. The epitaxial growth relationship between Cr and Co-W layer is Cr(112)[111¯]//Co-W(101¯0)[1¯21¯0] and Cr(112)[11¯0]//Co-W(101¯0)[0001]. With the increasing of Co-W film thickness, the in-plane strain of Co-W layer decreases from-0.388?4% to -0.2711%, while the out-of-plane strain decreases from 0.7813% to 0.5445%, and the first order effective magnetic anisotropy constant K1eff decreases from 3.82×106 erg/cc to 2.58×106 erg/cc correspondingly. The results showed that the effective magnetic anisotropy energy of magnetic layer can be tuned by adjusting the strain between underlayer and magnetic layer.

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