东北大学学报(自然科学版) ›› 2008, Vol. 29 ›› Issue (7): 1049-1052.DOI: -

• 论著 • 上一篇    下一篇

中频非平衡磁控溅射制备Ti-N-C膜

张以忱;巴德纯;颜云辉;马胜歌;   

  1. 东北大学机械工程与自动化学院;东北大学机械工程与自动化学院;东北大学机械工程与自动化学院;深圳国家863计划材料表面工程技术研究开发中心 辽宁沈阳110004;辽宁沈阳110004;辽宁沈阳110004;广东深圳518029
  • 收稿日期:2013-06-22 修回日期:2013-06-22 出版日期:2008-07-15 发布日期:2013-06-22
  • 通讯作者: Zhang, Y.-C.
  • 作者简介:-
  • 基金资助:
    国家自然科学基金;;

Ti-N-C films deposited by MF unbalanced magnetron sputtering process with twin targets

Zhang, Yi-Chen (1); Ba, De-Chun (1); Yan, Yun-Hui (1); Ma, Sheng-Ge (2)   

  1. (1) School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004, China; (2) National R and D Center for Surface Engineering of China, Shenzhen 518029, China
  • Received:2013-06-22 Revised:2013-06-22 Online:2008-07-15 Published:2013-06-22
  • Contact: Zhang, Y.-C.
  • About author:-
  • Supported by:
    -

摘要: 采用霍尔离子源辅助中频非平衡磁控溅射技术,通过改变工作气氛、偏压模式、溅射电流以及辅助离子束电流,在不锈钢材料基体上制备了Ti/TiN/Ti(C,N)硬质耐磨损膜层.对薄膜的颜色、晶体结构、膜基结合力等性能进行了检测分析.结果表明:膜层的颜色对工作气氛非常敏感,反应溅射中工作气氛的微小变化会引起表面膜层颜色很大的变化.在正常的反应气体进气量范围内和较小的基体偏压下,薄膜的晶体结构没有明显的择优取向.但是反应气体的过量通入会使薄膜的晶体结构出现晶面择优取向趋势.非平衡磁控溅射成膜技术对薄膜晶体结构的择优取向影响并不是很大.在镀膜过程中施加霍尔电流,可以有效地增加膜基结合力.

关键词: Ti-N-C薄膜, 非平衡磁控溅射, 中频溅射靶, 晶体结构, 离子束辅助沉积

Abstract: Introducing the Hall ion source assisted MF unbalanced magnetron sputtering process with twin targets, the Ti/TiN/Ti (C, N) anti-wear hard films were deposited on such substrates as stainless and high-speed steels through changing the working ambience, bias mode, sputtering current and ion beam assisted current. The color, crystal structure and film's bonding strength are all tested and analyzed. The results showed that the color of films is highly sensitive to testing ambience, and the slight change in working ambience enables the film surface color to change greatly. No obvious preferred orientation is found in the crystal structure of the films prepared within the normal intake range of reaction gas and low bias voltage of substrate. But, a trend of preferred orientation of crystal plane will take place if the intake of reaction gas is excessive. The effect of unbalanced magnetron process on the preferred orientation of film's crystal structure is not great. And the bonding strength of films can be increased efficiently if applying Hall current in the film deposition process.

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