东北大学学报(自然科学版) ›› 2011, Vol. 32 ›› Issue (5): 687-690.DOI: -

• 论著 • 上一篇    下一篇

图案几何参数对硅晶圆片表面吸收率的影响

王爱华;蔡九菊;   

  1. 东北大学国家环境保护生态工业重点实验室;
  • 收稿日期:2013-06-19 修回日期:2013-06-19 发布日期:2013-04-04
  • 通讯作者: -
  • 作者简介:-
  • 基金资助:
    国家高技术研究发展计划项目(2009AA05Z2152008AA042901)

Effect of pattern geometric parameters on surface absorptance of silicon crystal wafers

Wang, Ai-Hua (1); Cai, Jiu-Ju (1)   

  1. (1) SEPA Key Laboratory on Eco-Industry, Northeastern University, Shenyang 110819, China
  • Received:2013-06-19 Revised:2013-06-19 Published:2013-04-04
  • Contact: Wang, A.-H.
  • About author:-
  • Supported by:
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摘要: 利用时域有限差分法(FDTD)研究了晶圆片中SiO2沟槽尺寸变化对其表面吸收率的影响.同时利用等效介质理论(EMT)对预测结果进行了进一步解释分析.计算结果表明,次波长光栅时,EMT可以很好地预测光谱吸收率的变化;当SiO2沟槽宽度增加时腔共振效应提高了晶圆片表面的吸收率;当光栅周期与入射波长大小相当且填充比不是很小时,吸收率曲线在短波长区会出现较为强烈的震荡.

关键词: 时域有限差分法, 等效介质理论, 吸收率, 图案晶圆片

Abstract: The finite-difference time-domain(FDTD) method is employed to numerically examine the effect of various SiO2 trench sizes on the absorptance of silicon crystal wafers. Effective medium theory (EMT) is also used to help further explain absorptance predictions. The results show that EMT can readily predict spectral absorptance for sub-wavelength gratings. The cavity resonance effect may increase absorptance as trench width increases. The absorptance curves had strong oscillations at short wavelength when the period was comparable to the wavelength and the ratio of SiO2 trench width to the period was not too small.

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