东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2009, Vol. 30 ›› Issue (3): 392-395.DOI: -

• 论著 • 上一篇    下一篇

真空蒸发法制备CdS薄膜及其性能研究

单玉桥;党鹏;于晓中;单连中;   

  1. 东北大学材料各向异性与织构工程教育部重点实验室;
  • 收稿日期:2013-06-22 修回日期:2013-06-22 出版日期:2009-03-15 发布日期:2013-06-22
  • 通讯作者: Dang, P.
  • 作者简介:-
  • 基金资助:
    国家自然科学基金资助项目(50571023)

Preparation of CdS thin films by vacuum evaporation and their properties

Shan, Yu-Qiao (1); Dang, Peng (1); Yu, Xiao-Zhong (1); Shan, Lian-Zhong (1)   

  1. (1) Key Laboratory for Anisotropy and Texture of Materials, Northeastern University, Shenyang 110004, China
  • Received:2013-06-22 Revised:2013-06-22 Online:2009-03-15 Published:2013-06-22
  • Contact: Dang, P.
  • About author:-
  • Supported by:
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摘要： 用真空蒸发法制备了CdS薄膜,用扫描电镜、X射线衍射仪、紫外-可见光分光光度计、四探针对薄膜的形貌、结构、光电性能进行分析测试.研究结果表明,不同基片温度下所制备的CdS薄膜主要为六方相,CdS薄膜在(002)晶面有高度的择优取向;不同基片温度下的薄膜对可见光的透光率都超过70%;薄膜的电阻率随基片温度的升高而增大;基片温度为50℃时薄膜的Eg为2.41 eV;在200℃退火处理改善了CdS薄膜的质量,结晶度提高,电阻率降低,晶粒尺寸增大;基片温度为50℃时薄膜在200℃退火后的电阻率为255Ω.cm.

关键词: CdS, 太阳电池, 薄膜, 真空蒸发

Abstract: CdS thin film was prepared by vacuum evaporation and its surface morphology, structure and photoelectric properties were tested and analyzed with scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-visible spectroscopy and four-point probe method. The results showed that the CdS thin films deposited on the substrates at different temperatures are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation. The visible light transmittances of the films deposited on the substrates at different temperature are all over 70%, and the film resistance increases with increasing substrate temperature. The energy gap Eg of the thin film deposited on the substrate at 50°C is 2.41 eV. After annealed at 200°C, the thin film quality can be improved with crystallizability enhanced, resistance decreased and grain size increased, and the resistance of CdS films deposited on the substrate at 50°C is 255 Ω·cm.

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