东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2013, Vol. 34 ›› Issue (2): 248-250.DOI: -

• 材料与冶金 • 上一篇    下一篇

SiO2沟槽晶圆片在快速热处理中的温度分布

王爱华1，李立亚1,2   

  1. (1.东北大学材料与冶金学院，辽宁沈阳110819；2.重庆大学动力工程学院，重庆400030)
  • 收稿日期:2012-06-30 修回日期:2012-06-30 出版日期:2013-02-15 发布日期:2013-04-04
  • 通讯作者: -
  • 作者简介:王爱华(1976-)，男，山东德州人，东北大学讲师，博士后研究人员.
  • 基金资助:
    中央高校基本科研业务费专项资金资助项目(N110204015)；中国博士后科学基金面上资助项目(2012M510075).

Temperature Distribution of SiO2 Trench Wafer in Rapid Thermal Process

WANG Aihua1， LI Liya1,2   

  1. 1. School of Materials ＆ Metallurgy， Northeastern University， Shenyang 110819， China； 2. College of Power Engineering， Chongqing University， Chongqing 400030， China.
  • Received:2012-06-30 Revised:2012-06-30 Online:2013-02-15 Published:2013-04-04
  • Contact: WANG Aihua
  • About author:-
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摘要： 采用传导与辐射耦合传热模型，对快速热处理工艺中晶圆片内传热过程进行了数值模拟，研究了SiO2沟槽宽度和沟槽排列密度对晶圆片温度分布的影响.结果表明:在SiO2沟槽宽度相同的情况下，沟槽排列密度越大，晶圆片总的温度水平越高，但对温度均匀性几乎没有影响.这是由于沟槽排列密度增大使得晶圆片表面中SiO2所占份额增加，晶圆片表面总的吸收系数增大，吸收的入射辐射能增多，从而使温度水平提高.在SiO2沟槽排列密度相同的条件下，沟槽宽度的变化对于晶圆片总的温度水平和温度均匀性几乎没有影响.

关键词: 图案晶圆片, 快速热处理, 辐射传热, 温度分布, 热传输特性

Abstract: The heat transfer of a wafer in rapid thermal process was simulated using a model combining heat conduction with heat radiation to investigate the effects of the width of SiO2 trenches and their arrangement density on the temperature distribution of the wafer. The results show that， in the case of the same SiO2 trench width， the temperature level of the wafer rises with the increase of the pattern arrangement density， but the temperature uniformity on the wafer surface changes little. Increasing the pattern density can enlarge the proportion of SiO2 on the wafer surface and， as a result， the surface absorptance and the incident radiation absorption increase， which elevates the temperature level. When the arrangement density of the SiO2 trenches is constant， the SiO2 trench width has little influence on the temperature level and uniformity.

Key words: patterned wafer, rapid thermal process, radiation heat transfer, temperature distribution, thermal transport property

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