东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2012, Vol. 33 ›› Issue (12): 1722-1725.DOI: -

• 论著 • 上一篇    下一篇

N注入过程中Ti薄膜内的晶体结构变化

王建军;粕壁善隆;刘春明;   

  1. 东北大学材料与冶金学院;日本东北大学国际交流中心;
  • 收稿日期:2013-06-19 修回日期:2013-06-19 发布日期:2013-04-04
  • 通讯作者: -
  • 作者简介:-
  • 基金资助:
    中央高校基本科研业务费专项资金资助项目(N090402005);;

Changes of crystal structure in Ti thin films during N implantation

Wang, Jian-Jun (1); Kasukabe, Yoshitaka (2); Liu, Chun-Ming (1)   

  1. (1) School of Materials and Metallurgy, Northeastern University, Shenyang 110819, China; (2) Center for International Exchange, Tohoku University, Sendai 980-8576, Japan
  • Received:2013-06-19 Revised:2013-06-19 Published:2013-04-04
  • Contact: Wang, J.-J.
  • About author:-
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摘要： 利用电子束加热沉积(EBD)法在经洁净处理的NaCl基板表面沉积Ti薄膜,并利用离子加速器向薄膜中注入62keV N+2离子,分析了N注入前后Ti薄膜中的晶体结构变化.透射电镜(TEM)观察结果表明,N原子的侵入导致Ti薄膜发生hcp-fcc相变,部分hcp-Ti转变成fcc-TiNy;N原子占据晶格中八面体间隙位置产生晶格畸变而导致的内应力可能是hcp-fcc相变的驱动力之一.随着薄膜中N含量的增加,hcp-Ti减少,fcc-TiNy成分增多.利用电子能量损失谱(EELS)测定了Ti薄膜的能量损失变化,分析认为由于N的侵入,Ti原子与N原子结合形成了TiNy化合物,N 2p外层电子主要和Ti...

关键词: Ti薄膜, 离子注入, hcp-fcc相变, EELS, 杂化轨道

Abstract: Ti thin films were deposited by electron beam deposition(EBD) method on the cleaned NaCl substrates, and were implanted with 62 keV N2+ by an accelerator. Changes of crystal structures in Ti thin films were analyzed for those samples before and after N implantation. TEM results showed that hcp-fcc transformation is induced due to the invasion of N atoms into Ti thin films, and hence parts of hcp-Ti in films are changed into fcc-TiNy. Implanted N atoms occupy the octahedral-sites in the crystal lattices and lead to lattice distortion, which supports inner stress as one of the possible driving force for hcp-fcc transformation. With the N/Ti ratio increasing, the amount of hcp-Ti decreases and that of fcc-TiNy increases. Changes in energy loss for Ti films were measured by EELS, and it is suggested that Ti atoms and implanted N atoms are combined into TiNy compounds for the bonding of the outer N 2p covalent electrons and Ti 3p-4s hybrid orbitals.

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