东北大学学报:自然科学版 ›› 2016, Vol. 37 ›› Issue (5): 688-691.DOI: 10.12068/j.issn.1005-3026.2016.05.017

• 机械工程 • 上一篇    下一篇

NiO-TiO2纳米复合薄膜的阻变特性

李建昌, 李润霞, 郑辰平   

  1. (东北大学 机械工程与自动化学院, 辽宁 沈阳110819)
  • 收稿日期:2015-03-18 修回日期:2015-03-18 出版日期:2016-05-15 发布日期:2016-05-13
  • 通讯作者: 李建昌
  • 作者简介:李建昌(1970-),男,河北河间人,东北大学教授.
  • 基金资助:
    中央高校基本科研业务费专项资金资助项目(N110403001).

Resistance Switching of NiO-TiO2 Nano-Composite Thin Films

LI Jian-chang, LI Run-xia, ZHENG Chen-ping   

  1. School of Mechanical Engineering & Automation, Northeastern University, Shenyang 110819, China.
  • Received:2015-03-18 Revised:2015-03-18 Online:2016-05-15 Published:2016-05-13
  • Contact: LI Jian-chang
  • About author:-
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摘要: 利用溶胶凝胶法制备了不同n(Ni)/n(Ti)比的NiO-TiO2复合薄膜,电学测试表明薄膜具有可重复双极阻变特性,且开关比与NiO薄膜相比有显著提升.400℃退火n(Ni)/n(Ti)为7∶1的样品阻变阈值电压低、开关比高且稳定性好,原因是NiO-TiO2薄膜可形成P-N结纳米结构.焦耳热分析表明薄膜荷电输运属于热激发,高阻态符合由氧空位缺陷俘获电荷所致空间电荷限制导电机制,低阻态为欧姆特性,阻变机理为电荷俘获及再释放.

关键词: 溶胶凝胶法, 金属氧化物复合薄膜, 阻变特性, 氧空位

Abstract: The NiO-TiO2 (NTO) nanocomposite thin films with different n(Ni)/n(Ti) ratios were fabricated through sol-gel method. The current-voltage measurements indicated that the NTO films exhibit bipolar resistance switching behavior with low threshold voltage, high on/off ratio and long retention time. The low resistance state was governed by the Ohmic mechanism, while the high resistance state can be described with the oxygen-vacancy-related space charge limited conduction. The switching mechanism is related to the charge trapping/detrapping process.

Key words: sol-gel method, metal-oxide composite thin film, resistance switching, oxygen vacancy

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