Abstract: CdS thin film was prepared by vacuum evaporation and its surface morphology, structure and photoelectric properties were tested and analyzed with scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-visible spectroscopy and four-point probe method. The results showed that the CdS thin films deposited on the substrates at different temperatures are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation. The visible light transmittances of the films deposited on the substrates at different temperature are all over 70%, and the film resistance increases with increasing substrate temperature. The energy gap Eg of the thin film deposited on the substrate at 50°C is 2.41 eV. After annealed at 200°C, the thin film quality can be improved with crystallizability enhanced, resistance decreased and grain size increased, and the resistance of CdS films deposited on the substrate at 50°C is 255 Ω·cm.