Journal of Northeastern University(Natural Science)

Journal of Northeastern University ›› 2003, Vol. 24 ›› Issue (1): 54-57.DOI: -

• OriginalPaper • Previous Articles     Next Articles

Al element distribution and the properties of transparent conducting ZAO nanometer film

Lu, Feng (1); Xu, Cheng-Hai (1); Sun, Chao (2); Wen, Li-Shi (2)   

  1. (1) Sch. of Mech. Eng. and Automat., Northeastern Univ., Shenyang 110004, China; (2) Inst. of Metal Res., Chinese Acad. of Sci., Shenyang 110015, China
  • Received:2013-06-23 Revised:2013-06-23 Online:2003-01-15 Published:2013-06-23
  • Contact: Lu, F.
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Abstract: The distribution of Al element in the ZAO nanometer film made by DC(direct current) magnetron reactive sputtering was investigated by means of EDS and XRD. The relationship of Al content on electronic and optical properties of the ZAO film were systematically examined. The results indicate that Al distribution in the ZAO film is uniform. The ZAO film have the structure of ZnO crystal and no aluminum oxides was found. The doping Al replacement of Zn in the ZnO phase is the key factor in improving the conductivity of the ZAO film but no effect on the light transparence. The resistivity of the ZAO film is as low as 4.5 × 10-4 Ω. cm and the transmissivity in visible region is around 80%.

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