东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2005, Vol. 26 ›› Issue (6): 582-584.DOI: -

• 论著 • 上一篇    下一篇

硼掺杂对碳纳米管形貌和结构的影响

王志;巴德纯;曹培江;梁吉   

  1. 东北大学机械工程与自动化学院;东北大学机械工程与自动化学院;深圳大学理学院;清华大学机械工程系 辽宁沈阳　110004
  • 收稿日期:2013-06-24 修回日期:2013-06-24 出版日期:2005-06-15 发布日期:2013-06-24
  • 通讯作者: Wang, Z.
  • 作者简介:-
  • 基金资助:
    国家自然科学基金资助项目(90205028);;东北大学博士学位论文资助项目(200107)

Effect of boron-doping on morphology and microstructure of carbon nanotube

Wang, Zhi (1); Ba, De-Chun (1); Cao, Pei-Jiang (2); Liang, Ji (3)   

  1. (1) School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004, China; (2) School of Science, Shenzhen University, Shenzhen 518060, China; (3) Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
  • Received:2013-06-24 Revised:2013-06-24 Online:2005-06-15 Published:2013-06-24
  • Contact: Wang, Z.
  • About author:-
  • Supported by:
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摘要： 以Fe3O4纳米粒子为催化剂,CH4,B2H6和H2为气源,采用电子回旋共振微波等离子体化学气相沉积技术(ECR CVD)在多孔硅基底上制备出了掺硼碳纳米管薄膜·使用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、能量色散X射线谱(EDX)和X射线光电子谱(XPS)对样品的形貌、结构及组分进行表征·结果表明:通入B2H6后,纳米管的形貌和结构均发生了变化·生长气氛中硼的存在使得高取向性密集碳纳米管转变为较为分散且取向性很差的纳米管·从中空结构转变为类竹节结构,同时多壁管外径增大,管壁增厚,表面变得粗糙,并导致纳米管的生长速度降低,长度减小·

关键词: 碳纳米管, 硼掺杂, ECRCVD, 形貌, 结构, 纳米粒子

Abstract: Boron-doped carbon nanotubes (CNTs) were prepared on porous silicon substrate by electron cyclotron resonance-chemical vapor deposition (ECR-CVD), with CH4, B2H6 and H2 used as source gases and Fe3O4 nanoparticle as catalyst. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS) were used to characterize the morphology, microstructure and composition of specimens. Comparing with the undoped CNTs, the boron-doped ones show the change in not only the morphology of CNT films, i.e., from high-orientability and intensive to low-orientability and scattered arrangement, but in the microstructure of CNTs, i.e., from hollow to bamboo-like tubes with bigger outer diameters, thicker tube wall and rough surface. Thus, the growth rate of boron-doped CNTs is lower than that of undoped CNTs.

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