东北大学学报（自然科学版）

东北大学学报(自然科学版) ›› 2003, Vol. 24 ›› Issue (1): 54-57.DOI: -

• 论著 • 上一篇    下一篇

ZAO透明导电纳米薄膜中Al元素分布对其性能的影响

陆峰;徐成海;孙超;闻立时   

  1. 东北大学机械工程与自动化学院 ; 东北大学机械工程与自动化学院 ; 中国科学院金属研究所 ; 中国科学院金属研究所 辽宁沈阳　110004
  • 收稿日期:2013-06-23 修回日期:2013-06-23 出版日期:2003-01-15 发布日期:2013-06-23
  • 通讯作者: Lu, F.
  • 作者简介:-
  • 基金资助:
    国家自然科学基金资助项目(50172051)·

Al element distribution and the properties of transparent conducting ZAO nanometer film

Lu, Feng (1); Xu, Cheng-Hai (1); Sun, Chao (2); Wen, Li-Shi (2)   

  1. (1) Sch. of Mech. Eng. and Automat., Northeastern Univ., Shenyang 110004, China; (2) Inst. of Metal Res., Chinese Acad. of Sci., Shenyang 110015, China
  • Received:2013-06-23 Revised:2013-06-23 Online:2003-01-15 Published:2013-06-23
  • Contact: Lu, F.
  • About author:-
  • Supported by:
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摘要： 主要对直流反应磁控溅射法制备ZAO纳米薄膜中Al元素的相对含量进行了分析,对其作了EDS,XRD测试,并研究了Al质量分数与ZAO薄膜的光、电性能的关系·得出ZAO薄膜中成分是均匀的,具有ZnO晶体结构;Al元素的掺杂没有形成新的化合物(Al2O3),Al对Zn的掺杂替换是提高ZAO薄膜导电性能的关键因素,对薄膜在可见光区的透射性影响不大·制备的薄膜最低电阻率为4 5×10-4Ω·cm,可见光透射率达到80%以上·

关键词: ZAO薄膜, Al质量分数, EDS, XRD, 电阻率, 透射率

Abstract: The distribution of Al element in the ZAO nanometer film made by DC(direct current) magnetron reactive sputtering was investigated by means of EDS and XRD. The relationship of Al content on electronic and optical properties of the ZAO film were systematically examined. The results indicate that Al distribution in the ZAO film is uniform. The ZAO film have the structure of ZnO crystal and no aluminum oxides was found. The doping Al replacement of Zn in the ZnO phase is the key factor in improving the conductivity of the ZAO film but no effect on the light transparence. The resistivity of the ZAO film is as low as 4.5 × 10-4 Ω. cm and the transmissivity in visible region is around 80%.

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