Abstract: The failure behavior of Au interconnects, 2 μm wide and 200 nm thick, at high-density alternating current was investigated. Analyzing the temperature field model of the failure melting process of Au interconnects under the action of alternating current, an analytic solution to the temperature field at high current density was given. The comparison between experimental data and theoretically calculated values revealed that under the high current density AC loading the Au interconnects will fuse and then fail, which is due to the local overheating rather than the thermal fatigue-induced damage.