Journal of Northeastern University ›› 2012, Vol. 33 ›› Issue (1): 77-80+85.DOI: -

• OriginalPaper • Previous Articles     Next Articles

Effect of strain of Co-W thin film on effective magnetic anisotropy energy

Qin, Gao-Wu (1); Xiao, Na (2); Li, Song (1); Ren, Yu-Ping (1)   

  1. (1) Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China; (2) Key Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
  • Received:2013-06-19 Revised:2013-06-19 Published:2013-01-17
  • Contact: Qin, G.-W.
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Abstract: Co-11at%W films with different thicknesses (9~80 nm) were deposited on MgO (220) single crystal substrate with Cr underlayer (100 nm) by magnetron sputtering. The epitaxial growth relationship between Cr and Co-W layer is Cr(112)[111¯]//Co-W(101¯0)[1¯21¯0] and Cr(112)[11¯0]//Co-W(101¯0)[0001]. With the increasing of Co-W film thickness, the in-plane strain of Co-W layer decreases from-0.388?4% to -0.2711%, while the out-of-plane strain decreases from 0.7813% to 0.5445%, and the first order effective magnetic anisotropy constant K1eff decreases from 3.82×106 erg/cc to 2.58×106 erg/cc correspondingly. The results showed that the effective magnetic anisotropy energy of magnetic layer can be tuned by adjusting the strain between underlayer and magnetic layer.

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