Journal of Northeastern University Natural Science ›› 2016, Vol. 37 ›› Issue (5): 688-691.DOI: 10.12068/j.issn.1005-3026.2016.05.017

• Mechanical Engineering • Previous Articles     Next Articles

Resistance Switching of NiO-TiO2 Nano-Composite Thin Films

LI Jian-chang, LI Run-xia, ZHENG Chen-ping   

  1. School of Mechanical Engineering & Automation, Northeastern University, Shenyang 110819, China.
  • Received:2015-03-18 Revised:2015-03-18 Online:2016-05-15 Published:2016-05-13
  • Contact: LI Jian-chang
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Abstract: The NiO-TiO2 (NTO) nanocomposite thin films with different n(Ni)/n(Ti) ratios were fabricated through sol-gel method. The current-voltage measurements indicated that the NTO films exhibit bipolar resistance switching behavior with low threshold voltage, high on/off ratio and long retention time. The low resistance state was governed by the Ohmic mechanism, while the high resistance state can be described with the oxygen-vacancy-related space charge limited conduction. The switching mechanism is related to the charge trapping/detrapping process.

Key words: sol-gel method, metal-oxide composite thin film, resistance switching, oxygen vacancy

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