In the semiconductor fabrication equipment， the coatings on aluminum alloy often fail due to the coupling effect of high-temperature， vacuum and aggressive gases， including their plasma. In the chlorine-based plasma， the anodized coating has a high etching rate， leading to rapid removal， while the etching rate of Y2O3 coatings is approximately one in 50 of that of the anodized coating. In the fluorine-based plasma， both the anodized coating and Y2O3 coatings experience particle contamination due to the fluoride layer peeling. The corrosion resistance of the anodized coating can be significantly enhanced by adjusting the composition and temperature of the electrolyte or depositing a pure aluminum layer on the aluminum alloy surface. Additionally， improving the density of Y2O3 coatings can reduce their etching rate. Combining these strategies with remote plasma cleaning techniques can minimize the impact of charged particles on chamber materials， significantly reducing particle contamination in the reaction chamber. During the etching and thin film deposition processes， changes in the chamber surface composition can alter the plasma state， leading to various process defects.
