Removal Mechanism and Effect of Parameters on Grinding Force in Grinding SiC Ceramics

doi:10.12068/j.issn.1005-3026.2024.04.012

Abstract

Abstract:

In order to explore the removal mechanism and influence law of grinding force in grinding SiC ceramics， the simulation model of single abrasive striking SiC ceramics was established based on the SPH（smoothed particle hydrodynamics） method， and the crack generation and propagation mechanism during grinding SiC ceramics were analyzed； the effect of grinding velocity （v_s）， feeding rate （v_w） and grinding depth （a_p） on the removal mechanism， the normal grinding force and tangential grinding force of grinding SiC ceramics were analyzed by the single factor experiment. The results showed that the abrasives striking the workpiece lead to the generation of the median cracks and the transverse cracks. With the increase of abrasive pressing depth， the transverse crack expands to the material surface， and when the transverse crack expands to the material surface， the brittle fracture occurs. With the increase of v_s， the decrease of v_w and a_p， and the decrease of the area and depth of the pits on the grinding surface， the plastic removal area becomes larger， and the normal grinding force and tangential grinding force both decrease. These results may provide an important basis for high‐efficiency and low‐damage machining of SiC ceramic components.

Key words: grinding, removal mechanism, grinding force, SiC ceramics, SPH

CLC Number:

TH 161

Yun-guang ZHOU, Chuan-chuan TIAN, Shu-hai WANG, Han CHEN. Removal Mechanism and Effect of Parameters on Grinding Force in Grinding SiC Ceramics[J]. Journal of Northeastern University(Natural Science), 2024, 45(4): 548-554.

Figures/Tables 11

Fig.1 Experimental equipment

Table 1 Single factor experimental scheme of grinding SiC

试验序号	主轴转速v_s	进给速度v_w	磨削深度a_p
试验序号	r·min^-1	mm·min^-1	μm
1	12 000	50	20
2	12 000	250	20
3	12 000	450	20
4	12 000	650	20
5	2 000	250	20
6	7 000	250	20
7	17 000	250	20
8	12 000	250	10
9	12 000	250	30
10	12 000	250	40

Table 2 JH-2 constitutive model parameters of SiC ceramic material

参数	数值
密度/（kg·m^-3）	3 163
剪切模量/GPa	183
抗拉强度/GPa	0.37
A	0.96
B	0.35
C	0.0
M	1.0
N	0.65
HEL/GPa	14.567
D₁	0.48
D₂	0.48
K₁	204.785
K₂	0
K₃	0

Fig.2 Transverse crack generation when the abrasives press into SiC ceramic surface （a）—t=0.02 μs；（b）—t=0.04 μs.

Fig.3 Generation of transverse and median cracks when the abrasives press into SiC ceramic surface （a）—t=0.02 μs；（b）—t=0.04 μs.

Fig.4 Grinding surface at different vs

Fig.5 Grinding surface at different vw

Fig.6 Grinding surface at different ap

Fig.7 Effect of vs on Fn and Ft

Fig.8 Effect of vw on Fn and Ft

Fig.9 Effect of ap on Fn and Ft

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